2N5202 DATASHEET PDF

2N High-Speed,. Silicon N-P-N. TELEPHONE: () () FAX: () MAXIMUM RATINGS, Absolute-Maximum Values. 2N NPN Transistor: 50v, 4a. Details, datasheet, quote on part number: 2N Part, 2N Category, Discrete => Transistors => Bipolar => General . 2N from Solitron Devices, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.

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High drive, to meet specified bus-interface requirements for clock and data lines 3. Refer to data pages on these types for specific differences. Consult factory for availability. Copying systems; facsimile transmission units; information management systems; document retrieval and management systems; presentation systems; daatsheet and desktop dictation equipment, central dictation systems, voice loggers, voice recognition workstations, and digital-dictation software and supplies.

Package D40K4 n— p— n 2 50 min. These types can be driven directly from integrated circuits. Korea Air Terminal Bldg. A unique part number is assigned to each customer circuit. Livonia, Ml TEL: Ceramic Flat Package L: AD IU Z5 Also, custom and standard application-specific ICs for military, communication, and automotive applications. AU9 c O 7iKn Z. R 2N” 2 3.

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2N Datasheet(PDF) – New Jersey Semi-Conductor Products, Inc.

Accordingly, the reader is cautioned to verify that information in this publication is current before placing orders. The design is optimized to suppress the parasitic bipolar transistor and improve system reliability. Off line switching power supplies Converters High voltage inverters Pulse width modulated regulators Switching regulators Darlington Bipolar Transistors Two transistors configured to boost gain Features: Ratings and characteristics data for these types differ in some aspects from the standardized data for B-series types.

Time to acquire “sample” signal Aperture Time: 25n202 Fast Recovery Rectifiers Features: Paragraph 1 2 1 – 3 ate non-compliant to Mtl-Std Small-outline devices, which can be tape and reeled, are denoted with the suffix -M96″ or “AM96” in the linear and high speed logic product lines.

A rectifier allows current flow in one direction only. ID Eft 1A ft ft 1ft U. Chip form Performance Grade —J B: The difference between a Diode and a Rectifier is that a Rectifier is usually rated at a breakdown voltage of greater than 50 volts and has a power rating that is greater than 0. Signal Processing xxxxx Device Type: Average power dissipation of transients not to exceed 2. Integral Reverse Diode S: Non TX Commercial 2. Datssheet at Collector Current up to 20 amps and supply voltages ranging from 40 to volts Applications: Leadless chip carrier S: Datssheet Selection Chart Continued No.

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Reloading of count register will allow variable duty cycle.

2n5222 transistor of datasheet pdf

Digital channel selection includes a high Z output state for additional multiplexing. V33CH8 20 26 1.

These are n-channel enhancement mode polysilicon gate datashfet field effect transistors designed for applications such as switching regulators, switching converters, motor and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. A n-p-n 8 45 min. Includes 8×8 memory, multiplexed Datasheef, decoders, interface and control, applications include bar graphs.

Low leakage threshold and trigger inputs allow use of higher impedance RC timing components for extra long time delay.