1N 1N 1N VF 1N 1N 1N 0. 0. 1. 2. 3. 4 This datasheet contains the design specifications for . 1N, 1N & 1N Vishay General Semiconductor. Document Number: Revision: Aug 1. Schottky Barrier Rectifier. Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters.
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It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. Download 1N datasheet from Fagor.
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1N Datasheet(PDF) – Motorola, Inc
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1N5820: Schottky Barrier Rectifier, 3.0 A, 20 V
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The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.
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